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Infrared Optical Material - Si

Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some that causes an absorption band at 9 microns. To avoid this, material can be prepared by Float-Zone (FZ) process.Optical silicon is generally lightly doped (5-40 ohm cm) for best transmission above 10 microns, and doping is usaully boron (p-type) and phosphorus (n-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.

CZ Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5-8 micron region. The strong absorption band at 9 microns makes it unsuitable for Co2 laser transmission applications, but it is frequently used for laser mirrors because of its high thermal conductivity and low density. Application as window, lens in the 1.5-8 µm region; Mirror for Co2 laser and spectrometer applications.

Si Optical grade

Optical Properties
Transmission Range 1.2~8µm
Reflection Loss, for two surfaces at 5µm 46.2%
Reflection Index See below
Wavelength (µm) Refractive Index (n) Wavelength (µm) Refractive Index(n)
1.357
/
5.500
3.4213
1.3951
3.4975
6.000
3.4202
1.6606
3.4929
6.500
3.4195
1.8131
3.4608
7.000
3.4189
2.1526
3.4476
7.500
3.4186
2.3254
3.443
8.000
3.4184
3.000
3.432
8.500
3.4182
3.500
3.4284
10.00
3.4179
4.000
3.4257
10.50
3.4178
4.500
3.4236
11.04
3.4176
5.000
3.4223
 
 
Physical properties
Density 2.33g/cm3
Hardness, Mohs 7
Dielectric Constant for 9.37 x 109Hz 13
Melting point, °C 1414
Thermal Conductivity, W/m·K at 313 K 163
Thermal Expansion, 1/K at 293 K 2.6x10-6
Specific Heat Capacity, J(kg·°C) 712.8
Bandgap, eV 1.1
Knoop Hardness, kg/mm2 1100
Young's Modulus, Gpa 130.91
Shear Modulus, Gpa 79.92
Bulk Modulus, Gpa 101.97
Debye Temperature, K 640
Poisson's Ratio 0.28
Chemical properties
Solubility in water None
Molecular Weight 28.09

 

Infrared Optical Material