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RONAR-SMITH®
LASER OPTICS & IR IMAGING
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Laser Diodes |
WAVELENGTH TECHNOLOGY announces the availability of Pulsed Laser Diodes. Standard product is available at 850 nm, 905 nm and 1550 nm. By stacking the diode chips in series, intense pulses of radiation with peak power exceeding 120 Watts may be obtained when operated up to 0.1% duty factor. Typical pulse widths are in the range 2 to 200 ns at frequencies in the low kHz range.
Typical applications are for weapons training by simulating projectiles with laser pulses, speed guns for the police, therapeutic stimulation, proximity fuses on missiles, interactive cruise control on automobiles, railway crossing vehicle detectors and many other sensors. Rangefinders employing pulse laser diodes are made with measurement distances up to 10 km and with 1 m accuracy. |
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| Avalanche
Photodiodes |
| Si-EPI-APDs |
| Specifications(@
M=100, peak sensitivity) |
| Part
No. |
Diameter(µm) |
Wavelength
range(nm) |
Peak
sensitivity(nm) |
Responsivity
@ ¦Ë peak(A/W) |
Package |
Vbr
Volt |
Vbr
Tc V/¡ãC |
Ld
nA |
Noise
pA/sqrtHz |
Capacitance
pF |
Rise
time ps |
| SAE230Nx |
230 |
550-1050 |
905 |
50 |
S2,S3,M8,F3 |
150-300 |
0,6 |
1 |
0,2 |
1 |
500 |
| SAE500Nx |
500 |
550-1050 |
905 |
50 |
S2,S3,M8,L3,F3 |
150-300 |
0,6 |
1,5 |
0,2 |
2 |
500 |
| SAE500Vx |
500 |
400-1000 |
650 |
38 |
S2,S3,L3,M8 |
180-300 |
0,2 |
10 |
0,6 |
4 |
450 |
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| Si-REACH
THROUGH-APDs |
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Specifications(@
M=100, peak sensitivity)
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| Part
No. |
Diameter(µm) |
Wavelength
range(nm) |
Peak
sensitivity(nm) |
Responsivity
@ ¦Ë peak(A/W) |
Package |
Vbr
Volt |
Vbr
Tc V/¡ãC |
Ld
nA |
Noise
pA/sqrtHz |
Capacitance
pF |
Rise
time ps |
| SAR500x |
500 |
400-1100 |
905 |
60 |
S2,S3,F3 |
170-350 |
1 |
1,5 |
<1 |
1,5 |
450 |
| SARP500x |
500 |
400-1100 |
905 |
60 |
S2,S3 |
170-350 |
1 |
0,5 |
<0,2 |
1,5 |
450 |
| SARP500T6 |
500 |
400-1100 |
905 |
60 |
T6(TEC) |
170-350 |
1 |
0,5 |
¡¡ |
1,5 |
450 |
| SAR3500x |
3500 |
400-1100 |
905 |
65 |
E1,T6 |
250-350 |
3,1 |
4 |
<0,5 |
8 |
500 |
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Absolute
Maximum Ratings for Si-APDs
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| InGaAs-APDs |
| Specifications(@
M=100, peak sensitivity) |
| Part
No. |
Diameter(µm) |
Wavelength
range(nm) |
Peak
sensitivity(nm) |
Responsivity
@ ¦Ë peak(A/W) |
Package |
Vbr
Volt |
Vbr
Tc V/¡ãC |
Ld
nA |
Noise
pA/sqrtHz |
Capacitance
pF |
Rise
time ps |
| LAE080x |
80 |
1000-1650 |
1550 |
10 |
S5,S6,Y |
40-65 |
0,1 |
12 |
<0,4 |
1 |
350 |
| LAE200x |
200 |
1000-1650 |
1550 |
10 |
S5,S6,Y |
40-65 |
0,1 |
40 |
<0,8 |
2,5 |
700 |
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Absolute
Maximum Ratings for InGaAs-APDs
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| Pulsed
Laser Diodes |
| Preliminary
Specifications(@
21¡ãC,150nm,6.66kHz) |
| Part
No. |
Wavelength(nm) |
min
power(Watt) |
package |
emitting(µmxµm) |
lop(A) |
lth(mA) |
| 850D1S03X |
850 |
5 |
U,S |
75
x 1 |
7 |
300 |
| 850D1S06X |
850 |
11 |
U,S |
150
x 1 |
15 |
600 |
| 850D1S09X |
850 |
17 |
U,S |
230
x 1 |
22 |
900 |
| 850D1S12X |
850 |
23 |
U,S |
300
x 1 |
30 |
1200 |
| 850D1S16X |
850 |
30 |
U,S |
400
x 1 |
40 |
1500 |
| 850D2S06X |
850 |
22 |
U,S |
150
x 125 |
15 |
600 |
| 850D3S09X |
850 |
45 |
U,S |
230
x 225 |
22 |
900 |
| 850D3S12X |
850 |
60 |
U,S |
300
x 225 |
30 |
1200 |
| 850D4S12X |
850 |
80 |
U,S |
300
x 340 |
30 |
1200 |
| 850D4S16X |
850 |
100 |
U,S |
400
x 340 |
40 |
1500 |
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| Option:
C,R,Y package |
| Specifications(@
21¡ãC,150nm,6.66kHz) |
| Part
No. |
Wavelength(nm) |
min
power(Watt) |
package |
emitting(µmxµm) |
lop(A) |
lth(mA) |
| 905D1S1.5X |
905 |
3 |
U,S |
37.5
x 1 |
3,5 |
100 |
| 905D1S03X |
905 |
6 |
U,S |
75
x 1 |
7 |
200 |
| 905D1S06X |
905 |
13 |
U,S |
150
x 1 |
15 |
400 |
| 905D1S09X |
905 |
19 |
U,S |
230
x 1 |
22 |
600 |
| 905D1S12X |
905 |
26 |
U,S |
300
x 1 |
30 |
800 |
| 905D1S16X |
905 |
34 |
U,S |
400
x 1 |
40 |
1200 |
| 905D2S06
X |
905 |
25 |
U,S |
150
x 125 |
15 |
400 |
| 905D1S3J08X* |
905 |
70 |
U,S |
200
x 10 |
40 |
750 |
| 905D2S3J08X* |
905 |
140 |
U,S |
200
x 125 |
40 |
750 |
| 905D3S3J08X* |
905 |
210 |
U,S |
200
x 250 |
40 |
750 |
| 905D3S09X |
905 |
55 |
U,S |
230
x 225 |
22 |
600 |
| 905D3S12X |
905 |
70 |
U,S |
300
x 225 |
30 |
800 |
| 905D4S12X |
905 |
90 |
U,S |
300
x 340 |
30 |
800 |
| 905D4S16X |
905 |
130 |
U,S |
400
x 340 |
40 |
1200 |
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| *(specifications
@ 21¡ãC,100ns,1
KHz)
Option:C,R,Y
package |
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Generic characteristics
at 21¡ãC
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specifications(@ 21¡ãC,150ns,duty
factor=0,1%)
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| Part
No. |
Wavelength(nm) |
min
power (Watt) |
package |
emitting(µmxµm) |
lop(A) |
lth(mA) |
| 155G1S06X |
1550 |
5 |
S |
150
x 1 |
20 |
1 |
| 155G1S14X |
1550 |
12 |
S |
350
x 1 |
40 |
1,5 |
| 155G2S06X |
1550 |
10 |
S |
150
x 150 |
20 |
1 |
| 155G4S14X |
1550 |
45 |
S |
350
x 340 |
40 |
1,5 |
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| Generic
characteristics at 21¡ãC |
Package Drawings |
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